Semiconductor devices and methods of manufacturing thereof

ABSTRACT

A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

BACKGROUND

This disclosure relates generally to a semiconductor device, and in some embodiments, to transistor devices that include providing a cut dummy gate with metal gate refill.

The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and lowering associated costs. Such scaling down has also increased the complexity of IC structures (such as three-dimensional transistors) and processing and, for these advancements to be realized, similar developments in IC processing and manufacturing are needed. For example, device performance (such as device performance degradation associated with various defects) and fabrication cost of field-effect transistors become more challenging when device sizes continue to decrease. Although methods for addressing such a challenge have been generally adequate, they have not been entirely satisfactory in all aspects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a perspective view illustrating a semiconductor device according to some embodiments.

FIG. 2 illustrates a flow chart of an example method to make a semiconductor device, in accordance with some embodiments.

FIGS. 8A and 8B, illustrate cross-sectional views cut along a direction (X′-X′) of FIG. 1 , with the source/drain (S/D), i.e., without the gate of a semiconductor device, made by the method of FIG. 1 , during various fabrication stages in accordance with some embodiments.

FIGS. 3-7, 9-11, 12A, 12B and 12C illustrate cross-sectional views cut along a direction (X-X) of FIG. 1 with the gate, during various fabrication stages in accordance with some embodiments.

FIGS. 13, 14A and 14B are top views illustrating arrangements of the channels and gates according to some embodiments.

FIG. 15 is a perspective view illustrating another semiconductor device according to some embodiments.

FIG. 16 illustrates a flow chart of an example method illustrating steps for forming a dielectric material in making a semiconductor device, in accordance with some embodiments.

FIGS. 17A and 17B illustrate cross-sectional views cut along a direction (X-X) of FIG. 15 with the gate, during various fabrication stages in accordance with some embodiments.

FIG. 18 illustrates a cross-sectional view similar to FIG. 17B, and including distance parameters in accordance with some embodiments.

FIG. 19 is a top view illustrating an arrangement of the channels and gates according to some embodiments according to the arrangement of FIG. 18 .

FIG. 20 illustrates a cross-sectional view cut along a direction (X-X) of FIG. 15 with the gate, in accordance with some embodiments.

FIG. 21 is a top view illustrating an arrangement of the channels and gates according to some embodiments according to the arrangement of FIG. 20 .

FIG. 22 illustrates a cross-sectional view cut along a direction (X-X) of FIG. 15 with the gate, in accordance with some embodiments.

FIG. 23 is a top view illustrating an arrangement of the channels and gates according to some embodiments according to the arrangement of FIG. 22 .

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

In contemporary semiconductor device fabrication processes, a large number of semiconductor devices, such as field effect transistors (“FETs”), are fabricated on a single wafer. Non-planar transistor device architectures, such as fin-based transistors (typically referred to as “FinFETs”), can provide increased device density and increased performance over planar transistors. Some advanced non-planar transistor device architectures, such as nanosheet (or nanowire) transistors, can further increase the performance over the FinFETs. When compared to the FinFET where the channel is partially wrapped (e.g., straddled) by a gate structure, the nanosheet transistor, in general, includes a gate structure that wraps around the full perimeter of one or more nanosheets for improved control of channel current flow. For example, in a FinFET and a nanosheet transistor with similar dimensions, the nanosheet transistor can present larger driving current (Ion), smaller subthreshold leakage current (I_(off)), etc. Such a transistor that has a gate structure fully wrapping around its channel is typically referred to as a gate-all-around (GAA) transistor of GAAFET.

The present disclosure provides various embodiments of a semiconductor device, which may include a FinFET, GAAFET, or nanosheet FET (NSFET) transistor. Embodiments of the present disclosure are discussed in the context of forming a non-planar transistor, such as a FinFET, GAAFET, or NSFET transistor, and in particular, in the context of a semiconductor device. A substrate is provided. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

A semiconductor device as described can provide advantages. According to some embodiments, the dielectric material for gate cut may be closer to the inactive channel than to the active channel. Since the inactive channel does not need a real gate to allow for control of the semiconductor device, the space on the inactive channel side may be reduced and the space on the active channel side may correspondingly be increased. Thus, the metal gate fill process (forming the gate 1100) window may be enlarged increasing device yield and performance.

FIG. 1 is a perspective view illustrating the semiconductor device showing the cross-sectional cuts within the gate 1100, and cross-sectional cuts outside the gate 1100. FIG. 1 illustrates the device 100 with S/D structures 800, ILD 810, substrate 302, conducting gate 1100, dielectric material 900, isolation regions 500, fins 412, and dummy fin 600.

FIG. 2 illustrates a flowchart of a method 200 to form a non-planar transistor device, according to one or more embodiments of the present disclosure. For example, at least some of the operations (or steps) of the method 200 can be used to form a FinFET (or a GAA) transistor device. Further, the method 200 can be used to form a FinFET transistor (or GAA transistor) device in a respective conduction type such as, for example, an n-type transistor device or a p-type transistor device. The term “n-type,” as used herein, may be referred to as the conduction type of a transistor having electrons as its conduction carriers, and the term “p-type,” as used herein, may be referred to as the conduction type of a transistor having holes as its conduction carriers.

FIG. 2 illustrates a flowchart of a method 200 to form a semiconductor device according to one or more embodiments of the present disclosure. It is noted that the method 200 is merely an example, and is not intended to limit the present disclosure. In some embodiments, the semiconductor device includes, at least part of, a fin field-effect-transistor (FinFET), but can include any of various other transistors (e.g., a GAAFET, a nanosheet field-effect-transistor) while remaining within the scope of the present disclosure.

Referring to FIG. 2 , the method 200 starts with operation 202 in which a semiconductor substrate is provided. The method 200 continues to operation 204 in which fins are formed. Then in operation 206 an isolation region is formed. Continuing to operation 208, a dummy fin is formed. Continuing to operation 210, a dummy gate is formed. Continuing to operation 212, S/D structures are formed. Continuing to operation 214 an interlayer dielectric (ILD) is formed. Continuing to operation 216, a dielectric material is formed through the dummy gate. Continuing to operation 218, the dummy gate is removed. Continuing to operation 220 a conducting gate is formed.

In the following discussions, the operations of the method 200 may be associated with views of a semiconductor device 100 at various fabrication stages. In some embodiments, the semiconductor device 100 may be a FinFET. In other embodiments the semiconductor device 100 may be a GAAFET or nanosheet FET (NSFET).

Corresponding to operation 202 of FIG. 2 , FIG. 3 is a view of the semiconductor device 100 including a substrate 302 at one of the various stages of fabrication, according to some embodiments. In some embodiments, the substrate 302 is covered by a photo-sensitive layer and is patterned to subsequently form one or more fins (which may be channels in the final device) of the semiconductor device, which will be discussed in the following operations.

For a FinFET structure, the substrate 302 may be a semiconductor substrate, such as a bulk semiconductor, a semiconductor-on-insulator (SOI) substrate, or the like, which may be doped (e.g., with a p-type or an n-type dopant) or undoped. The substrate 302 may be a wafer, such as a silicon wafer. Generally, an SOI substrate includes a layer of a semiconductor material formed on an insulator layer. The insulator layer may be, for example, a buried oxide (BOX) layer, a silicon oxide layer, or the like. The insulator layer is provided on a substrate, typically a silicon or glass substrate. Other substrates, such as a multi-layered or gradient substrate may also be used. In some embodiments, the semiconductor material of the substrate 302 may include silicon; germanium; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.

Corresponding to operation 204 of FIG. 1 , FIG. 4 is a view of the semiconductor device 100 including a plurality of fins 412 at one of the various stages of fabrication, according to some embodiments, where fins 412 a correspond to an inactive channel, and fins 412 b correspond to an active channel. As shown, trenches 413 are disposed between adjacent fins 412. It is noted that although two fins 412 are shown in the illustrated embodiments of FIG. 4 (and the following figures), any desired number of fins may be formed on the semiconductor substrate 302. As such, when multiple fins are formed on the substrate 302 that are in parallel with one another, the fins can be spaced apart from one another by a corresponding trench 413.

The fins 412 may be formed by a photolithographic process, for example. A photo-sensitive layer may be patterned in a photolithographic process, for example, and may be used as an etch mask to etch the substrate 302 to form fins 412 and trenches 413 between the fins 412, in the substrate 302. Portions of the semiconductor substrate 302 sandwiched between the trenches 413 are thus formed as fins 412. The fins 412 each extend upward from a surface of the substrate 302. The trenches 413 may be strips (viewed from the top of the semiconductor device 100) parallel to each other, and closely spaced with respect to each other. After the fins 412 are formed, the photo-sensitive layer may be removed. Subsequently, a cleaning process may be performed to remove a native oxide of the semiconductor substrate 302. The cleaning may be performed using diluted hydrofluoric (DHF) acid, or the like, for example.

The inactive fin 412 a (inactive channel) may be arranged in a polysilicon diffusion edge (PODE) region (where there is dummy gate polysilicon (PO) at the FIN edge) as described below. The active fin 412 b (active channel) may be arranged in an active region corresponding to a Non-PODE region as described below. In some embodiments the inactive fin 412 a may be arranged in a Non-PODE region. The reference character 412 refers to a fin generically, while the reference characters 412 a and 412 b refer to an inactive fin and active fin, respectively.

Corresponding to operation 206 of FIG. 2 , FIG. 5 is a view of the semiconductor device 100 including isolation regions 500 at one of the various stages of fabrication, according to some embodiments. The isolation regions 500, which are formed of an insulation material, such as a dielectric, can electrically isolate neighboring fins from each other. The insulation material may be an oxide, such as silicon oxide, a nitride, the like, or combinations thereof, and may be formed by a high density plasma chemical vapor deposition (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based material deposition in a remote plasma system and post curing to make it convert to another material, such as an oxide), the like, or combinations thereof. Other insulation materials and/or other formation processes may be used. In the illustrated embodiment, the insulation material is silicon oxide formed by a FCVD process. An anneal process may be performed once the insulation material is formed. A planarization process, such as a chemical mechanical polish (CMP), may remove any excess insulation material and form top surfaces of the isolation regions 500 and a top surface of the fins 412 that are coplanar (not shown).

In some embodiments, the isolation region 500 include a liner, e.g., a liner oxide (not shown), at the interface between each of the isolation regions 500 and the substrate 302 (fins 412). In some embodiments, the liner oxide is formed to reduce crystalline defects at the interface between the substrate 302 and the isolation region 500. Similarly, the liner oxide may also be used to reduce crystalline defects at the interface between the fins 412 and the isolation region 500. The liner oxide (e.g., silicon oxide) may be a thermal oxide formed through a thermal oxidation of a surface layer of the substrate 302, although other suitable methods may also be used to form the liner oxide.

Corresponding to the operation 208 of FIG. 2 , FIG. 6A illustrates a view of the semiconductor device 100 including a dummy fin 600 at one of the various stages of fabrication, according to some embodiments. The dummy fin 600 may be formed in the isolation region 500 between the inactive fin 412 a and the active fin 412 b. The dummy fin 600 may, in some embodiments, be formed in a recess in the isolation region 500 before the overall isolation region 500 is recessed to expose upper regions of the inactive fin 412 a and the active fin 412 b in formation of the STI regions 500. The recess may be formed by a photolithographic method including etching to form the recess. For example, the photolithographic method may include a dry etch or a wet etch using dilute hydrofluoric (DHF) acid to form the recess.

Next, the isolation regions 500 are recessed to form shallow trench isolation (STI) regions 500, as shown in FIG. 6A. The isolation regions 500 are recessed such that the upper portion of the fins 412 protrude from between neighboring STI regions 500. In other words, the fins 412 are protruded from a top surface of the STI regions 500. The top surface of the STI regions 500 may have a flat surface (as illustrated), a convex surface, a concave surface (such as dishing), or combinations thereof. The top surface of the STI regions 500 may be formed flat, convex, and/or concave by an appropriate etch. The isolation regions 500 may be recessed using an acceptable etching process, such as one that is selective to the material of the isolation regions 500. For example, a dry etch or a wet etch using dilute hydrofluoric (DHF) acid may be performed to recess the isolation regions 500.

The dummy fin 600 may be formed of a dummy fin material which is deposited in the recess, where excess dummy fin material is then removed such as by etching or polishing. The dummy fin material may be an insulating material, for example. The dummy fin material may include a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxycarbide, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, and combinations thereof. The dummy fin material may be formed by a high density plasma chemical vapor deposition (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based material deposition in a remote plasma system and post curing to make it convert to another material, such as an oxide), the like, or combinations thereof. In some other embodiments, the dummy fin material may include a high-k dielectric material. As such, the dummy fin material may have a k value greater than about 4.0 or even greater than about 7.0, and may include a metal oxide or a silicate of Hf, Al, Zr, La, Mg, Ba, Ti, Pb, and combinations thereof. The dummy fin material may be TaN, TaO, Al₂O₃, or HfO, for example. The formation methods of such a high-k dummy fin material may include CVD molecular beam deposition (MBD), atomic layer deposition (ALD), PECVD, and the like. Excess dummy fin material is then removed such as by etching back or polishing.

FIG. 6B illustrates an embodiment where the dummy fin 600 is formed to be embedded in the STI 500. In FIG. 6B a dummy fin material for the dummy fin 600 is formed in the region between the fins 412. The dummy fin 600 may be formed of the dummy fin material which is deposited in the region between the fins 412, where dummy fin material may then patterned such as by etching.

The isolation region 500 material is formed over the fins 412 and dummy fin 600. The isolation regions 500 may be formed of an insulating material in a similar manner as described with respect to FIG. 5 .

A polishing process, such as CMP, may be performed to planarize and remove portions of the isolation regions 500, fins 412 and dummy fin 600. An etch back may be performed to remove upper portions of the isolation regions 500.

Corresponding to the operation 210 of FIG. 2 , FIG. 7 illustrates views of the semiconductor device 100 including a dummy gate structure 700 at one of the various stages of fabrication, according to some embodiments.

The dummy gate structure 700 may be formed from a gate layer formed over the fins 412 and then planarized, such as by a CMP. A mask layer may be deposited over the gate layer. The gate layer may be formed of, for example, polysilicon, although other materials may also be used. The mask layer may be formed of, for example, silicon nitride or the like. After the layers (e.g., the gate layer, and the mask layer) are formed, the mask layer may be patterned using acceptable photolithography and etching techniques to form a mask. The pattern of the mask then may be transferred to the gate layer by an acceptable etching technique to form the dummy gate structure 700. The patterned dummy gate structure 700 has regions exposing each of the fins 412 for subsequent source/drain (S/D) structure formation.

Corresponding to the operation 212 of FIG. 2 , FIG. 8A is a view of the semiconductor device 100 in which S/D structures are epitaxially formed. The cross sectional view of FIG. 8A is cut within the S/D structures, and is a cross sectional view (along X′-X′) parallel to that of FIG. 7 , which is cut within the dummy gate structure 700.

The S/D structures 800 are formed by epitaxially growing a semiconductor material from the exposed portions of the fins 412. Various suitable methods can be used to epitaxially grow the S/D structures 800 such as, for example, metal-organic CVD (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), selective epitaxial growth (SEG), the like, or combinations thereof.

In some embodiments, when the resulting semiconductor device 100 is an n-type FinFET, the S/D structures 800 may include silicon carbide (SiC), silicon phosphorous (SiP), phosphorous-doped silicon carbon (SiCP), or the like. When the resulting FinFET is a p-type FinFET, the S/D structures 800 may include SiGe, and a p-type impurity such as boron or indium.

The S/D structures 800 may be implanted with dopants to form the S/D structures 800, followed by an anneal process. The implanting process may include forming and patterning masks such as a photoresist to cover the regions of the device 100 that are to be protected from the implanting process. The S/D structures 800 may have an impurity (e.g., dopant) concentration in a range from about 1×10¹⁹ cm⁻³ to about 1×10²¹ cm⁻³. P-type impurities, such as boron or indium, may be implanted in the S/D structures 800 of a P-type transistor. N-type impurities, such as phosphorous or arsenide, may be implanted in the S/D structures 800 of an N-type transistor. In some embodiments, the epitaxial S/D structures 800 may be in situ doped during growth.

Corresponding to the operation 214 of FIG. 2 , FIG. 8B is a view of the semiconductor device 100 in which an interlevel dielectric (ILD) 810 is formed at one of the various stages of fabrication, according to some embodiments. FIG. 8B illustrates a cross sectional view which is cut within the S/D structures 800 in a similar fashion to FIG. 8A. The ILD 810 is formed over the fins 412 and the S/D structures 800, and is formed in holes in the dummy gate structure 700. The ILD 810 may be formed over an etch stop layer (ESL) (812). In some embodiments, the ILD 810 is formed of a dielectric material such as silicon oxide, phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate Glass (BPSG), undoped silicate glass (USG), or the like, and may be deposited by any suitable method, such as CVD, PECVD, or FCVD. After the ILD 800 is formed, a planarization process, such as a CMP process, may be performed to achieve a level upper surface for the ILD 810. After the planarization process, the upper surface of the ILD 810 can be level with the upper surface of the dummy gate structure 600, in some embodiments.

Corresponding to the operation 216 of FIG. 1 , FIG. 9 is a view of the semiconductor device 200 in which a dielectric material is formed through the dummy gate 700 at one of the various stages of fabrication, according to some embodiments. FIG. 9 illustrates a cross sectional view which is cut within the gate structures.

The dummy gate 700 may be etched using an etch mask to form a hole 910 extending from a top surface of the dummy gate 700 to the dummy fin 600, or in some embodiments from a top surface of the dummy gate 700 to the isolation structure 500. The dummy gate 700 may be etched by an appropriate etchant, and may be etched using RIE, for example. The hole 910 along with the dummy fin 500 separate regions of the dummy gate 700.

A dielectric material 900 is formed in the hole 910. The dielectric material 900 may be, for example, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, silicon oxycarbonitride, silicon oxycarbide, multilayers thereof, or the like. The dielectric material 900 can be formed by depositing the dielectric material in the hole 910 using any suitable method, such as CVD, PECVD, or FCVD. The dielectric material 900 may be planarized, such as by CMP to remove the dielectric material 900 from a top surface of the dummy gate 700, if needed.

Corresponding to the operation 218 of FIG. 2 , FIG. 10 is a view of the semiconductor device 100 in which the dummy gate 700 is removed. The dummy gate 700 may be removed, for example, by an appropriate etch. For example, one or more isotropic etching processes may be performed.

Corresponding to the operation 220 of FIG. 2 , FIG. 11 is a view of the semiconductor device 100 in which the dummy gate 700 is replaced with conducting gate 1100. The conducting gate 1100 may include a gate dielectric 1110 and a gate electrode 1120. The central portions of the fins 412 are overlaid by the conductive gate electrode 1120 with the gate dielectric layer 1110 sandwiched therebetween. The gate dielectric layer 1110 may include a high-k dielectric material (e.g., with a k value greater than about 4.0 or even greater than about 7.0). In such embodiments, the high-k dielectric layer 1110 may include a material selected from: Al₂O₃, HfAlO, HfAlON, AlZrO, HfO₂, HfSiO_(x), HfAlO_(x), HfZrSiO_(x), HfSiON, LaAlO₃, ZrO₂, or combinations thereof. The high-k dielectric layer 1110 may be formed using a suitable process such as ALD, CVD, PVD, plating, or combinations thereof. The gate electrode 1120 may include a metal material such as, for example, Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlN, TaN, NiSi, CoSi, or combinations thereof. In some other embodiments, the gate electrode 1120 may include a polysilicon material. The polysilicon material may be doped with a uniform or non-uniform doping concentration. The gate electrode 1120 may be formed using a suitable process such as ALD, CVD, PVD, plating, or combinations thereof.

The gate electrode 1120 may include a stack of multiple metal materials. For example, the gate electrode 1120 may be a p-type work function layer, an n-type work function layer, multi-layers thereof, or combinations thereof. The work function layer may also be referred to as a work function metal. Example p-type work function metals that may include TiN, TaN, Ru, Mo, Al, WN, ZrSi₂, MoSi₂, TaSi₂, NiSi₂, WN, other suitable p-type work function materials, or combinations thereof. Example n-type work function metals that may include Ti, Ag, TaAl, TaAlC, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, other suitable n-type work function materials, or combinations thereof. A work function value is associated with the material composition of the work function layer, and thus, the material of the work function layer is chosen to tune its work function value so that a target threshold voltage V_(t) is achieved in the device that is to be formed. The work function layer(s) may be deposited by CVD, physical vapor deposition (PVD), ALD, and/or other suitable process.

FIG. 11 illustrates the height H_(C) of the fins (channels) 412 above the isolation regions 500. FIG. 11 further illustrates the height H_(D) of the dummy fin 600 above the isolation regions 500, and the width W_(D) of the dummy fin 600. W_(D) may be in the range of 0.5 to 50 nm. H_(D) may be in the range of 5 to 150 nm. H_(C) may be greater than, equal to, or less than H_(D).

FIGS. 12A, 12B and 12C are cross sections illustrating the semiconductor device 100 according to some embodiments illustrating some distance parameters. FIGS. 12A, 12B and 12C illustrate a portion of the semiconductor device 100 including the gate 1100 which may be an active gate, the dummy fin 600, the inactive fin (channel) 412 a, the active fin (channel) 412 b, and the isolation regions 500. In FIGS. 12A, 12B and 12C, the dielectric material 900 extends through the gate 1100 and contacts a top of the dummy fin 600. The inactive channel 412 a is a closest inactive channel to the dielectric material 900. A long axis of the active channel 412 b extends in a first direction (out of the page Z direction). A long axis of the gate 1100 extends in a second direction (left to right X direction). The second direction may be perpendicular to the first direction. The active channel 412 b extends in a third direction (vertical Y direction) from the substrate 302. The third direction may be perpendicular to the first and second directions. The disclosure is not limited to the first, second and third directions being perpendicular to each other. The dummy fin 600 and the dielectric material 900 may include a gap portion 1200, as shown in FIGS. 12A-12C, that separates, at least partially, a top of the dummy fin 600 from a bottom of the dielectric material 900.

According to some embodiments, the dielectric material may be closer to the inactive channel than to the active channel. Since the inactive channel 412 a does not need a real gate to allow for control of the semiconductor device, the space on the inactive channel side may be reduced and the space on the active channel side may correspondingly be increased. Thus, the metal gate fill process (forming the gate 1100) window may be enlarged over the active channel 412 b, which will increase device yield and performance.

Referring back to FIGS. 12A, 12B and 12C, the dielectric material 900 has an upper region 900U and a tapered region 900T below the upper region 900U. The upper region 900U has a first side S1 and a second side S2 opposite to the first side S1. The first side S1 is closer to the inactive channel 412 a than to the active channel 412 b in the second direction. The upper region 900U may be wider than the tapered region 900T in the second direction in some embodiments, may have the same width, or may be less wide.

The gate 1100 may have a third side S3 contacting the inactive channel 412 a, and a fourth side S4 contacting the active channel 412 b. The dummy fin 600 may have a top side, a fifth side S5 facing the inactive channel 412 a, and a sixth side S6 opposite to the fifth side S5.

Reference is made to FIG. 12A. According to some embodiments, a protrusion dimension CD_(P) is a distance from the first side to the fifth side in the second direction. The protrusion dimension CD_(P) may be in range of about 0.5 nm to about 50 nm. According to some embodiments, a landing dimension CD_(L) is a distance from the second side to the fifth side in the second direction. The landing dimension CD_(L) may be in range of 0.5 nm to 50 nm. According to some embodiments, a protrusion depth CDD is a depth in the third direction of the lower tapered region 900T. The protrusion depth CDD may be in a range of 0.3 nm to 100 nm.

Reference is made to FIG. 12C. According to some embodiments, CD_(I) is the distance from the inactive channel 412 a to the dielectric material 900, which is the distance from the first side S1 to the third side S3 in the second direction. CD_(I) may be in the range of about 1.0 nm to about 500 nm. According to some embodiments, CD_(A) is the distance from the active channel 412 b to the dielectric material 900, which is the distance from the second side S1 to the fourth side S4 in the second direction. CD_(A) may be in the range of about 1.0 nm to about 500 nm. According to some embodiments, CD_(A) may be greater than CD_(I), which may allow for the metal gate fill process (forming the gate 1100) window to be enlarged increasing device yield and performance. CD_(a) is the distance from the firth side S5 to the inactive channel 412 a. CD′ is the distance from the sixth side S6 to the active channel 412 b. When CD_(a) is approximately the same as CD_(i), CD_(A) may be greater than CD_(I).

Reference is made to FIG. 12B. According to some embodiments the dielectric material 900 has a first center line DL extending along an axis of the dielectric material 900 in the third direction. The dummy fin 600 has a second center line DF along an axis of the dummy fin 600 in the third direction. An offset CD_(C) is a distance between the first center line and the second center line in the second direction, and may be in the range of 0.5 nm to 50 nm, for example.

FIG. 13 is a top view of the semiconductor device 100 illustrating the parameters of FIGS. 12A-12C. In a corresponding fashion to FIGS. 12A-12C, FIG. 13 illustrates the gate 1100 a which may be an active gate, the dummy fin 600, the inactive fin (channel) 412 a, the active fin (channel) 412 b, and dielectric material 900. In FIG. 13 the dielectric material 900 extends into the gate 1100 showing a cut gate structure where regions of the gate 1100 a are separated, but regions of gate 1100 b are not. FIG. 13 likewise to FIGS. 12A-12C illustrates the parameters of protrusion dimension CD_(P), landing dimension CD_(L), offset CD_(C), as well as parameters CD_(A), CD_(I), CD_(a), and Ca.

FIG. 14A is a top view of the semiconductor device 100 according to some embodiments similar to FIG. 13 but illustrating the PODE region 1400 and the non-PODE region 1410. In the PODE region 1400 the inactive fin 412 a (inactive channel) does not extend past the gate 1100 a, while in the non-PODE region 1410, the active fin 412 b extends past the gate 1100 a.

FIG. 14B is a top view of the semiconductor device 100 according to some embodiments where the inactive fin 412 a (inactive channel) is formed on either side of the gate 1100 a in a cut channel method where a dielectric fill 1420 extends through the gate 1100 a separating portions of the inactive channel 412 a. Thus, in FIG. 14B, the inactive channel 412 a is in a non-PODE region 1410 at the point where the dielectric fill 1420 extends through the gate 1100 a. In this case, both the inactive channel 412 a and the active channel 412 b are in non-PODE regions 1410.

The dielectric fill 1420 may include a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxycarbide, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, and combinations thereof, for example.

FIG. 15 illustrates a semiconductor device 1500 according to some embodiments. FIG. 15 differs from the semiconductor device 100 of FIG. 1 in that no dummy fin is formed between the inactive channel 412 a and the active channel 412 b. Rather, the dielectric material 900 extends from a top of the gate 1100 to the dielectric isolation structure 500 separating the gate 1100 into separate regions.

FIG. 16 is a flow chart illustrating the formation of the dielectric material 900 to form the semiconductor device 1500. Corresponding to the operation 1610 of FIG. 16 , FIG. 17A is a view of the semiconductor device 1500 in which the dummy gate 700 is formed. The dummy gate 700 may be formed in the same manner described with respect to step 210 of FIG. 2 except that there is no dummy fin to be formed upon.

Corresponding to the operation 1620 of FIG. 16 , FIG. 17B is a view of the semiconductor device 100 in which the dielectric material 900 is formed. The dielectric material 900 may be formed in the same manner described with respect to step 216 of FIG. 2 except that the dielectric material 900 is formed to contact the isolation region 500 separating the gate 1100 into separate regions.

FIG. 18 is a cross sectional view of the semiconductor device 1500, after metal fill where the gate 1100 (active gate) has been formed and the dielectric material 900 extends through the gate 1100 and contacts the isolation region 500, according to some embodiments. FIG. 19 is a top view of the device 1500 of FIG. 18 .

In device 1500, the inactive channel 412 a is a closest inactive channel to the dielectric material 900. A long axis of the active channel 412 b extends in a first direction (out of the page Z direction). A long axis of the gate 1100 extends in a second direction (left to right X direction). The second direction may be perpendicular to the first direction. The active channel 412 b extends in a third direction (vertical Y direction) from the substrate 302. The third direction may be perpendicular to the first and second directions. The dielectric material 900 extends in the third direction from the gate 1100 top surface to the isolation region 500 and is disposed between the active channel 412 b and the inactive channel 412 a. The dielectric material 900 may be closer to the inactive channel 412 a than to the inactive channel 412 b in the second direction. The distance from the dielectric material 900 to the inactive channel 412 a is shown as CD_(I) in FIGS. 18 and 19 , while the distance from the dielectric material 900 to the active channel 412 b is shown as CD_(A). CD_(A) may be greater than CD_(I) in some embodiments. The distance from the dielectric material 900 to the inactive channel 412 a in the second direction may be in the range of 1.0 nm to 500 nm, for example. CD_(A) and CD_(I) may be 1 nm to 500 nm, for example.

Embodiments according to FIGS. 18 and 19 do not include the dummy fin 600. Thus, in some cases, the number of process steps may be reduced.

FIGS. 20 and 21 illustrate an arrangement where the dielectric material 900 contacts the inactive channel 412 a. FIG. 20 is a cross sectional view of the semiconductor device 1500, and FIG. 21 is a top view of the device 1500 of FIG. 20 . In some embodiments a width of the dielectric material 900 in the second direction is less than a width of the inactive channel 412 a in the second direction.

According to some embodiments, and as shown in FIGS. 20 and 21 , the dielectric material 900 has a landing dimension CD_(L) which is a distance the dielectric material 900 covers the inactive channel 412 a in the second direction, and a protrusion dimension CD_(P) which is a distance the dielectric material 900 does not cover the inactive channel 412 a in the second direction. The landing dimension CD_(L) may be in the range of 0.5 nm to 50 nm, for example. The protrusion dimension CD_(P) may also be in the range of 0.5 nm to 50 nm, for example.

In embodiments according to FIGS. 20 and 21 the dielectric material 900 contacts the inactive channel 412 a. Thus, in some embodiments the space on the inactive channel side may be further reduced and the space on the active channel side may correspondingly be further increased. Thus, the metal gate fill process (forming the gate 1100) window may be further enlarged increasing device yield and performance.

FIGS. 22 and 23 illustrate an arrangement where the dielectric material 900 contacts and completely covers the inactive channel 412 a. FIG. 22 is a cross sectional view of the semiconductor device 1500, and FIG. 23 is a top view of the device 1500 of FIG. 22 . A width of the dielectric material 900 in the second direction may be greater than a width of the inactive channel 412 a in the second direction. The width of the dielectric material 900 may be in the range of 2 nm to 150 nm, for example. The width of the inactive channel 412 a may be in the range of 2 nm to 100 nm, for example.

In embodiments according to FIGS. 22 and 23 the dielectric material 900 contacts and completely covers the inactive channel 412 a. Thus in some cases the space on the inactive channel side may be further reduced and the space on the active channel side may correspondingly be further increased. Thus, the metal gate fill process (forming the gate 1100) window may be further enlarged increasing device yield and performance.

In one aspect of the present disclosure, a semiconductor device is disclosed. A substrate is provided. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

In another aspect of the present disclosure, a semiconductor device is disclosed. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region and from the substrate, the channels include an active channel and an inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. The inactive channel is a closest inactive channel to a dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material extends in the third direction from the active gate top surface to the isolation region and is disposed between the active channel and the inactive channel. The dielectric material is closer to the inactive channel than to the inactive channel in the second direction.

In another aspect of the present disclosure, a method of fabricating a semiconductor device is disclosed. A substrate is provided. A plurality of channels as fins are formed extending from the substrate. The channels include an active channel, and include an inactive channel. An isolation region is formed on the substrate. The channels extend through the isolation region. A dummy fin is formed on the isolation region and between the active channel and the inactive channel. An active gate is formed over the active channel and the inactive channel, and contacts the dielectric isolation structure. A dielectric material is formed extending through the active gate and contacting a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. The dielectric material is closer to the inactive channel than to the active channel.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor device, comprising: a substrate; an isolation region disposed on the substrate; a plurality of channels extending through the isolation region and from the substrate, the channels including an active channel and an inactive channel; a dummy fin disposed on the isolation region and between the active channel and the inactive channel; an active gate disposed over the active channel and the inactive channel, and contacting the isolation region; and a dielectric material extending through the active gate and contacting a top of the dummy fin, the inactive channel being a closest inactive channel to the dielectric material, a long axis of the active channel extending in a first direction, a long axis of the active gate extending in a second direction, the active channel extending in a third direction from the substrate, wherein the dielectric material is closer to the inactive channel than to the active channel.
 2. The semiconductor device of claim 1, wherein the dielectric material has an upper region and a tapered region below the upper region, the upper region having a first side and a second side opposite to the first side, the first side being closer to the inactive channel than to the active channel in the second direction.
 3. The semiconductor device of claim 2, wherein the upper region is wider than the tapered region in the second direction.
 4. The semiconductor device of claim 2, wherein the dummy fin has a top side, a fifth side, and a sixth side opposite to the fifth side, the fifth side facing the inactive channel, wherein a protrusion dimension CD_(P) is a distance from the first side to the fifth side in the second direction, and is in range of 0.5 nm to 50 nm.
 5. The semiconductor device of claim 2, wherein the dummy fin has a top side, a fifth side facing the inactive channel, and a sixth side opposite to the fifth side, wherein a landing dimension CD_(L) is a distance from the second side to the fifth side in the second direction, and is in range of 0.5 nm to 50 nm.
 6. The semiconductor device of claim 2, wherein a protrusion depth CD_(D) is a depth in the third direction of the lower tapered region, and is in a range of 0.3 nm to 100 nm.
 7. The semiconductor device of claim 2, wherein the active gate has a third side contacting the inactive channel, and a fourth side contacting the active channel, CD_(I) is the distance from the inactive channel to the dielectric material, which is the distance from the first side to the third side in the second direction, and CD_(I) is in the range of 1.0 nm to 500 nm.
 8. The semiconductor device of claim 7, wherein CD_(A) is the distance from the active channel to the dielectric material, which is the distance from the second side to the fourth side in the second direction, and CD_(A) is in the range of 1.0 nm to 500 nm.
 9. The semiconductor device of claim 8, wherein CD_(A) is greater than CD_(I).
 10. The semiconductor device of claim 1, wherein the dielectric material has a first center line extending along an axis of the dielectric material in the third direction, the dummy fin having a second center line along an axis of the dummy fin in the third direction, and an offset CD_(C) is a distance between the first center line and the second center line in the second direction, and is in range of 0.5 nm to 50 nm.
 11. A semiconductor device, comprising: a substrate; an isolation region disposed on the substrate; a plurality of channels extending through the isolation region and from the substrate, the channels including an active channel and an inactive channel; an active gate disposed over the active channel and the inactive channel, and contacting the isolation region; and a dielectric material, the inactive channel being a closest inactive channel to the dielectric material, a long axis of the active channel extending in a first direction, a long axis of the active gate extending in a second direction, the active channel extending in a third direction from the substrate, the dielectric material extending in the third direction from the active gate top surface to the isolation region and disposed between the active channel and the inactive channel, wherein the dielectric material is closer to the inactive channel than to the inactive channel in the second direction.
 12. The semiconductor device according to claim 11, wherein the distance from the dielectric material to the inactive channel in the second direction is in the range of 1.0 nm to 500 nm.
 13. The semiconductor device according to claim 11, wherein the dielectric material contacts the inactive channel.
 14. The semiconductor device according to claim 13, wherein a width of the dielectric material in the second direction is less than a width of the inactive channel in the second direction.
 15. The semiconductor device according to claim 13, wherein the dielectric material has a landing dimension CD_(L) which is a distance the dielectric material covers the inactive channel in the second direction, and a protrusion dimension CD_(P) which is a distance the dielectric material does not cover the inactive channel in the second direction.
 16. The semiconductor device according to claim 15, wherein the landing dimension CD_(L) is in the range of 0.5 nm to 50 nm.
 17. The semiconductor device according to claim 15, wherein the protrusion dimension CD_(P) is in the range of 0.5 nm to 50 nm.
 18. The semiconductor device according to claim 15, wherein the dielectric material completely covers the inactive channel and a width of the dielectric material in the second direction is greater than a width of the inactive channel in the second direction.
 19. The semiconductor device according to claim 18, wherein the width of the dielectric material is in the range of 2 nm to 150 nm.
 20. A method of forming a semiconductor device, comprising: providing a substrate; forming a plurality of channels as fins extending from the substrate, the channels including an active channel, and including an inactive channel; forming an isolation region on the substrate, the channels extending through the isolation region; forming a dummy fin on the isolation region and between the active channel and the inactive channel; forming an active gate over the active channel and the inactive channel, and contacting the dielectric isolation structure; and forming a dielectric material extending through the active gate and contacting a top of the dummy fin, the inactive channel being a closest inactive channel to the dielectric material, wherein the dielectric material is closer to the inactive channel than to the active channel. 